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Microchip Expands Gallium Nitride (GaN) RF Portfolio with High Linearity Ka-Band Monolithic Microwave Integrated Circuits (MMICs) for Satellite Communication Terminals

Satellite communication systems use complex modulation schemes to achieve extremely fast data rates for transmitting video and broadband data. Therefore, they must have high RF output power while ensuring that the signal retains its desired characteristics. Microchip Technology Inc. today announced the new GMICP2731-10 GaN MMIC power amplifier to meet these requirements.

The new device is Microchip’s first GaN MMIC (Gallium Nitride Monolithic Microwave Integrated Circuit) designed for commercial and defense satellite communications, 5G networks, and other aerospace and defense systems.

The GMICP2731-10 is fabricated using GaN-on-SiC technology. It delivers up to 10W of saturated RF output power over a 3.5 GHz bandwidth between 27.5 and 31 GHz. The power of GMICP2731-10 can be increased by 20% on this basis; the small signal gain is 22 dB; the return loss is 15 dB. In addition, the new device features a balanced structure that is well matched to 50 ohm resistors and integrates DC blocking capacitors at the output to simplify design integration.

“As communication systems employ complex modulation schemes such as 128-QAM, and solid-state power amplifier (SSPA) power continues to rise, RF power amplifier designers face difficult challenges,” said Leon Gross, vice president of Microchip’s discrete products business unit. i.e. reducing weight and power consumption while looking for higher power solutions. GaN MMICs used in high power SSPAs can reduce power consumption and weight by more than 30% compared to their GaAs counterparts, which is great for satellite OEMs A huge advantage. The new product embodies the advantages of GaN technology and meets OEM requirements for size, weight, power consumption and cost.”

The GMICP2731-10 further expands Microchip’s existing product lineup to include GaAs MMIC RF power amplifiers, switches, LNAs and Wi-Fi® front-end modules, as well as GaN-on-Si for high Electronic mobility in radar systems Transistor (HEMT) driver and final amplifier transistor.

development tools

Microchip provides board design support to assist with design, as well as distribution partners. Microchip also offers a reduced model of the GMICP2731-10, enabling customers to more easily model the performance of the power amplifiers in the system and speed up design.

supply

GMICP2731-10 is now in mass production. For more information, please contact a Microchip sales representative or visit the Microchip website. To purchase the GMICP2731-10, visit our direct sales website or contact an authorized Microchip distributor.