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The third-generation semiconductor has broken through again! STMicroelectronics creates the first 8-inch SiC

From the perspective of semiconductor dating, silicon (Si) and germanium (Ge) are the first generation of semiconductors, especially Si, which constitutes the basis of all logic devices. The computing power of our CPU and GPU is inseparable from Si. Credit; Gallium Arsenide (GaAs) and Indium Phosphide (InP) are the representatives of the second generation semiconductors, among which GaAs plays an important role in RF power amplifier devices, and InP is widely used in optical communication devices…

In the third generation of semiconductors, emerging materials such as silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond (C), and aluminum nitride (AlN) have emerged. The industrialization of third-generation semiconductors also needs to find a balance in all aspects.

There is no simple substitution relationship between the first, second and third generations of semiconductors. The industry is large enough and the needs are diverse enough, and each material will find a suitable demand space.

For the third-generation semiconductor materials, GaN is mainly used in general radio frequency devices, and SiC and GaN are mainly used in power devices.

Driven by new market demands such as 5G and new energy vehicles, the third-generation semiconductor materials are expected to usher in accelerated development. The performance of silicon-based semiconductors can no longer fully meet the needs of 5G and new energy vehicles, and the advantages of third-generation semiconductors such as silicon carbide and gallium nitride are magnified.

In addition, the progress of preparation technology has made the cost of silicon carbide and gallium nitride devices continue to decline, and the cost-effective advantages of silicon carbide and gallium nitride will be fully manifested. According to preliminary judgment, the core growth point of the third-generation semiconductor in the future will be concentrated in the areas where silicon carbide and gallium nitride have their respective advantages.

On the 27th, STMicroelectronics (ST) announced that its Norrköping plant in Sweden has produced the first batch of 200mm (8-inch) silicon carbide (SiC) wafers, which will be used to produce prototypes of next-generation power electronics chips.

The company said that the upgrade of SiC wafers to 200mm marks an important milestone in ST’s expansion plan for automotive and industrial customers. Compared with 150mm wafers, 200mm wafers can increase production capacity and will make the available area for manufacturing integrated circuits. Almost doubled, qualified chip yield is 1.8-1.9 times that of 150mm wafers.

In addition, STMicroelectronics is working with upstream and downstream technology players in the supply chain to develop its own manufacturing equipment and production processes.

STMicroelectronics is an international power semiconductor manufacturer and focuses on automotive-grade power semiconductors. According to the newly released “2020 Automotive Semiconductor Manufacturers Market Share Report” by Strategy Analytics, STMicroelectronics, Infineon, NXP, Renesas, and Texas Instruments are the world’s top 5 automotive semiconductor suppliers. In 2020, these five suppliers A total of nearly 49% of the global automotive semiconductor market.