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MALVERN, Pa. — January 11, 2021 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced the SQJ211ELP, a new AEC-Q101 qualified 100 V p-channel TrenchFET® MOSFET for improved automotive Application power density and energy efficiency. Not only is the Vishay Siliconix SQJ211ELP the industry’s first compact PowerPAK® SO-8L packaged in a 5 mm x 6 mm gull-wing lead structure, it also has an industry-leading on-resistance of only 30 mW at 10 V.

The new automotive-grade MOSFETs announced today offer 26% and 46% lower on-resistance and 50% and 76% smaller footprints, respectively, compared to the closest competing devices in DPAK and D2PAK packages. The low on-resistance of the SQJ211ELP helps reduce on-state power consumption, thereby saving energy, and the excellent gate charge of only 45 nC at 10 V reduces gate drive losses.

The new MOSFETs can operate at high temperatures of +175°C and meet the ruggedness and reliability requirements of automotive applications such as reverse polarity protection, battery management, high-side load switching and LED lighting. In addition, the SQJ211ELP gull-wing lead structure also helps improve automatic optical inspection (AOI) capabilities, eliminate mechanical stress, and improve board-level reliability.

The device’s 100 V rating meets the safety margins required for many common input voltage rails in 12 V, 24 V, and 48 V systems. In addition, as a p-channel MOSFET, the SQJ211ELP simplifies gate drive design, eliminating the need to configure the charge pump required for n-channel devices. The MOSFETs are packaged in lead (Pb) free, halogen free, RoHS compliant, 100 % Rg and UIS tested.

Samples and production quantities of the SQJ211ELP are available now, with lead times of 14 weeks.

The Links:   SKM300GAL123D   ATTINY13A-PU